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Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE) is an advanced thin-film deposition system widely used in the manufacture of semiconductor devices.  With the help of SHI cryopumps, ultra-high vacuum chambers create a clean, dust-free environment for the growth of crystals used in this process.

Chemical Vapor Deposition (CVD)

In this coating process, a substrate (usually a wafer) is exposed to a gaseous mixture, producing a thin film layer.  Since many semiconductor manufacturing processes utilize CVD, most modern electronics would not exist without this technology.

Ion Implantation

Ion implantation is a low-temperature surface treatment process essential to manufacturing semiconductor wafers and other integrated circuits.  During this process, an ion beam penetrates the surface of a wafer, injecting critical dopants, or impurities, that modify its electrical conductivity.

Physical Vapor Deposition (PVD)

Like CVD, PVD is a vacuum-coating process that produces a thin film layer on a wafer or other substrate.  Each atom in the layer is deposited by condensation from the vapor phase to the solid phase.  Sputtering and evaporation are two of the most common PVD processes performed in semiconductor fabs.


Magnetic-field-applied Czochralski (MCZ) is a method used in the manufacture of single crystal silicon for large-scale integration (LSI).  Manufacturers of superconducting magnets for MCZ utilize cryocoolers to cool the superconducting magnets, creating a magnetic field that is applied to melted silicon to control the crystal growth.  SHI’s 4K Cryocoolers are ideal for MCZ applications, replacing the much more expensive and diminishing commodity of liquid helium.

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